| 摘要 |
A method of manufacturing a semiconductor device, in which method a pattern is etched by a dry etching process, for example, in a substrate protected by a resist pattern which is the negative of the pattern to be etched. In order to obtain a resist pattern which has adequate resistance to dry etching and which has been produced from a resist film having a high sensitivity, the resist pattern is produced in two stages. First a pattern is formed in a resist film present on a substrate, which resist film has been formed from a polymer made by polymerizing a monomer of the structure <IMAGE> wherein R1 is an alkyl group, Cl, Br, CN, H or R2, R2 is -COCl, -COBr, -COOH or -CONH2, and R1 does not react with R2. Then the material of the resist pattern is reacted with a mono- or poly-functional organic compound, with an organic siloxane containing SiH groups or other Si-containing functional groups which react with the resist pattern material, or with a metallo-organic compound. The functional group(s) of the mono- or poly-functional compound reacts with the group R2 of the resist pattern material so as to introduce an aromatic group or other dry-etch resistant group or atom into the resist pattern material. |
