| 摘要 |
PURPOSE:To perform the growth of the second time with very little defect and ih good reproducibility in the manufacture of a buried structure semiconductor laser and to obtain the buried structure semiconductor laser at a high yield rate by a method wherein an etching is performed on the active layer immediately before the growth of the second time. CONSTITUTION:An n-tpe AlGaAs clad layer 2, a GaAs active layer 3 and a first p-type AlGaAs clad layer 4 are made to grow in order on an n-type GaAs substrate 1. Then, a mesa striped mount 9 consisting of the first p-type clad layer 4 is formed using a selective etching method. At this time, active layers 3 are made to expose at the regions of the active layers excluding the region of the mesa striped mount 9 by the etching. Then, active layers 3b only are made to evaporate and are removed utilizing a fact that when the temperature of the substrate is held at 700 deg.C or more while an Ar beam is irradiated on the wafer in the MBE device, the GaAs only is made to evaporate. Then, a second p-type AlGaAs clad layer 5 and a p-type GaAs cap layer 6 are made to grow in order in the growing chamber of the same MBE device.
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