发明名称 DISPOSITIVO AVENTE UN CIRCUITO INTEGRATO A SEMICONDUTTORI
摘要 A semiconductor integrated circuit device for an amplifier circuit including a semiconductor substrate in which an audio amplifier circuit is formed in an integrated circuit form, at least one first wire bonding pad which is formed on said semiconductor substrate to ground said audio amplifier circuit, and an externally connecting terminal which is provided being separated away from said semiconductor substrate and which is electrically connected to said first wire bonding pad via a metal wire, wherein the improvement comprises a wire bonding pad for the substrate which is formed on said semiconductor substrate being separated away from said first wire bonding pad, and which grounds said semiconductor substrate, and a metallic connector wire which electrically connects said wire bonding pad for the substrate to said externally connecting terminal.
申请公布号 IT1134010(B) 申请公布日期 1986.07.24
申请号 IT19800025539 申请日期 1980.10.23
申请人 HITACHI LTD 发明人 KUNIO SEKI;RITSUJI TAKESHITA
分类号 H01L21/822;H01L21/3205;H01L21/60;H01L23/48;H01L23/50;H01L23/52;H01L23/528;H01L23/58;H01L27/02;H01L27/04 主分类号 H01L21/822
代理机构 代理人
主权项
地址