| 摘要 |
PURPOSE:To enable to obtain an excellent contact by a method wherein, when a wiring layer is connected to the part, having a high melting point metal or its silicide, located on a polycrystalline silicon wiring layer or the impurity region on a semiconductor substrate, the contact part is formed into the structure wherein the high melting point metal or its silicide is removed. CONSTITUTION:The contact hole 9 perforated on an interlayer insulating film 7 is formed into the structure having no Ti silicide for the purpose of connecting a wiring and an aluminum wiring 8. The removal of Ti silicide can be performed easilyusing buffered HF liquid without giving damage on the surface of the first layer of polycrystalline silicon. Also, when a PSG (phosphorus silicate glass) obtained by performing a chemical vapor-phase growing method is used as an interlayer insulating film, the etching using buffered HF liquid on the PSG formed by conducting a chemical vapor-phase growing method can be performed at double the speed of the Ti silicide. Accordingly, when the Ti silicide is going to be removed, the spreading in lateral direction of the Ti silicide does not become larger than the contact hole. As a result, a wiring of low layer resistance and the contact resistance with the aluminum wiring which does not become higher can be obtained. |
