| 摘要 |
PURPOSE:To perform the reactive ion etching having three-dimensional anisotropy by taking out the reactive neutral molecule flow generated in the inside of a subdischarge chamber and introducing it into a main chamber of a high-vacuum side in the optical incident direction. CONSTITUTION:In the inside of a main chamber 1 wherein the reactive gas is introduced through an introduction port 8 to make the high vacuum and a grounded wall 5 is made to an electrode opposing to a target, the material 10 to be etched is provided via a target material 14 on a negative electrode 13 and the reactive ions generated from the target material 14 are accelerated by the electric field of an ionic sheath 16 and the above-mentioned material 10 is vertically etched on the surface. Together with this, in the inside of a subdischarge chamber 2 wherein the reactive gas is introduced through an introduction port 7 and the pressure is higher than the main chamber 1, the neutral molecule generated by making the above-mentioned electrode 5 a common electrode and colliding the reactive ion accelerated by a plasma sheath 15 against a target material 3 on a negative electrode 4 is introduced into the main chamber 1 via an introduction pipe 17 after the ions are filtered through the mesh electrodes 6, 18 and thereby the material 10 is etched in the optical incident angle.
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