| 摘要 |
PURPOSE:To synthesize efficiently a high-density AlN thin film without accompanying the formation of powder by introducing a gaseous halide of Al and gaseous NH3 into a growth chamber respectively through the separated routes and setting properly both the temp. of a mixing part of gaseous raw material and the temp. of a providing part of a substrate. CONSTITUTION:Gaseous halide of Al such as gaseous AlCl3 formed in a raw material chamber 1 and gaseous NH3 are respectively introduced into a growth chamber 2 through the introduction ports 5, 6 which are the separated routes and provided to a counter electrode. The temp. distribution in the growth chamber 2 is set so that the temp. is regulated to 350-400 deg.C in a mixing part 3 of gaseous raw material and it is regulated to >=420 deg.C in a providing part 4 of a substrate. Thereby the formation of the powdery crystal in the gas phase and the decrease of the film growth velocity can be prevented. Furthermore the growth temp. of AlN onto the substrate can be made minimum.
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