BONDING WIRE FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a bonding wire for a semiconductor device having high tensile strength at high temp. and superior thermal fatigue resistance by adding a specified amount of Be to Al. CONSTITUTION:A bonding wire for a semiconductor device is manufactured by adding 0.1-1.5wt% Be to Al. The grains of a precipitated phase is required to be regulated to <=about 0.3mum grain size and to be dispersed at <=about 1mum interval so as to inhibit recrystallization. In order to form such grains, annealing is preferably carried out at about 400-600 deg.C in case of 1hr annealing time.