发明名称 THIN FILM FORMING DEVICE BY ION VAPOR DEPOSITION
摘要 PURPOSE:To improve treating capacity and the uniformity of thin films by providing a disk which can be mounted with plural sheets of wafer, a mechanism for rotating and translating said disk and a wafer loading and unloading mechanism for attaching and detaching the wafers to and from the disk in a vacuum chamber. CONSTITUTION:Plural holders 14 for the wafers 2 are provided to the bottom surface of the disk 12 in the upper part in the vacuum vessel 8. The wafers 2 are mounted to the holders and the disk 12 is rotated in an arrow R direction and translated in an arrow S direction by the mechanism 16 for rotating and translating the disk 12. All of plural sheets of the above-mentioned wafers 2 are successively subjected to the irradiation of the ion beam IB from an ion source 4 past an aperture 24 and the vapor deposition of the vapor material VM from a vapor source 6 past an aperture 26. The untreated wafers 2 are mounted to the disk 12 in the vacuum and the treated wafers 12 are taken out of the disk 12 by a rotary plate 32 which is subjected to rising rotating 90 deg. descending by the wafer 2 loading and unloading mechanism 28 connected to the vessel 8 and conveying belts 34, 36, 38, 40, etc.
申请公布号 JPS61163268(A) 申请公布日期 1986.07.23
申请号 JP19850003771 申请日期 1985.01.12
申请人 NISSIN ELECTRIC CO LTD 发明人 MORI KAZUO
分类号 C23C14/32;C23C14/22 主分类号 C23C14/32
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