| 摘要 |
<p>Metal tellurium is vaporized under the atmosphere of oxygen gas and/or inert gas formed into a plasma by a high frequency power to thereby form a tellurium oxide (TeOx, 0 X ≦ 2) layer. The tellurium oxide layer formed in accordance with the present method is stabilized, and a suboxide having a high sensitivity which has been considered to be unsuitable as an optical recording medium due to the lack of stability can be utilized.</p><p>High frequency power, gas pressure and vaporization speed of metal tellurium can be varied to thereby vary the value X of TeOx from 0 to 2. When the TeOx films whose value X thicknesswise is different are formed continuously within one and the same vessel and the vaporization speed is made to zero, oxidization of a film surface may be carried out Thereby, the TeO, film may be formed on the surface, and an optical recording medium may be obtained which is extremely stable and has excellent adhesive properties between the substrates and between the layers.</p> |
