| 摘要 |
PURPOSE:To increase the width of a gate region and to decrease ON resistance, by forming an irregular groove in the direction so as to cross the surface of a substrate in the gate region. CONSTITUTION:On the surface of an N<-> buffer layer 1, a back gate region 2 and a source region 3 are formed. On the back surface of the layer 1, a drain region 6 is formed. Then, a mask 17 is aligned on the source region 3. Thereafter, an irregular groove 7 is formed by etching. A gate oxide film 4 is grown, and a wave shaped electrode, which is to become a gate region 15, is attached. In this constitution, the gate groove can be made large, and ON resistance can be made small. |
