发明名称 |
Memory circuit with noise preventing means for word lines |
摘要 |
A memory circuit provided with improved noise preventing circuits allowing a high-density arrangement of memory cells is disclosed. The memory circuit comprises a cross-coupled circuit provided for adjacent two word lines. The cross-coupled circuit suppress the potential of one of the adjacent two word lines to a reference level when the other of the adjacent two word lines takes a selection level or a level near the selection level.
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申请公布号 |
US4602355(A) |
申请公布日期 |
1986.07.22 |
申请号 |
US19830531372 |
申请日期 |
1983.09.12 |
申请人 |
NEC CORPORATION |
发明人 |
WATANABE, HIROSHI |
分类号 |
G11C11/413;G11C8/08;G11C11/408;(IPC1-7):G11C7/02 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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