发明名称 |
STATIC MEMORY CELL EMBODYING DUAL-CHANNEL TECHNOLOGY |
摘要 |
<p>A static memory cell has two switching transistors of a first channel type disposed on a semiconductor substrate which are connected through respective load elements of a second channel type to a supply voltage, the drain terminals of the switching transistors being cross-connected to the gate of the other transistor as well as to the gate of the load element connected in series therewith. Each of the load elements consists of highly doped sections of a layer of polycrystalline silicon covering the substrate with an insulating layer therebetween and weakly or non-doped portions of the polycrystalline silicon layer forming a channel region between the highly doped sections. An additionally doped region of the semiconductor substrate functioning as a gate region is disposed below the channel region. This construction substantially reduces the surface area of the substrate occupied by the memory cell.</p> |
申请公布号 |
CA1208364(A) |
申请公布日期 |
1986.07.22 |
申请号 |
CA19830437629 |
申请日期 |
1983.09.27 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
WIEDER, ARMIN |
分类号 |
G11C11/412;H01L21/8244;H01L27/11;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/412 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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