| 摘要 |
PURPOSE:To increase the gain by adding two enhancement and depletion FETs respectively so as to increase the resistance value of a load resistor. CONSTITUTION:The FETs D8, D9 and E6, E7 are added. When a potential at an output terminal 5 is decreased, a source-base voltage of the FETE6 is decrease attended therewith and a threshold voltage of the FETE6 is decreased. As a result, the drain-source voltage of the FETE6 is decreased to reduce the current of the FETD4. Thus, the current change in the FETD4 against the voltage change at an output terminal 5 is slight and the resistance value of the FETD4 as a load resistor is increased. The FETD8 plays a role of a con stant power supply. When the potential of the output terminal 6 is increased similarly, the resistance value of the FETD5 as the load resistor is increased. Thus, the gain is increased.
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