发明名称 BONDING WIRE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain the titled wire having excellent creep strength, low-cycle fatigue strength, and corrosion resistance, by a method wherein high-purity aluminum or aluminum alloy is coated with a specific metal. CONSTITUTION:This invention uses a material made of the base metal of high- purity aluminum or aluminum alloy coated with a kind from among Au, Ag, and Cu. The thickness of the coat film is preferably 1-30mum. The reason why Au, Ag, or Cu is used for the coat film is that it is a metal excellent in corrosion resistance to the impurity ions in resin and ready to diffuse to the base aluminum and improves in adhesion by the diffusion bonding of the film with the base metal, and that high tensile force is kept up to high temperatures by the formation of an intermetallic compound in the diffused layer. Therefore, the creep strength and the low-cycle fatigue strength improve. This can effectively protect the base metal from corrosive environment.
申请公布号 JPS61160958(A) 申请公布日期 1986.07.21
申请号 JP19850000807 申请日期 1985.01.09
申请人 TOSHIBA CORP 发明人 SATO MICHIO;UZAWA SUMIYO
分类号 C23C14/16;H01L21/60;H01L23/49 主分类号 C23C14/16
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