发明名称 PROCESSOR FOR DEVELOPMENT OF SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To prevent the reflux of waste atmosphere by means of other devices by a method wherein the waste piping of the title processor is provided with a waste trap made of a U-piping or the like, and an exhaust piping is connected between the trap and the development processing unit. CONSTITUTION:This processor is provided with a waste exhaust piping 3 connected to the development processing unit 1, an exhaust trap 4 to prevent the direct intake of waste to an exhaust piping 6, an automatic dumper 5 to adjust the exhaust amount of the development processing unit on the basis of developing action, and the exhaust piping 6 connected to the exhaust trap 4 via exhaust dumper 5. It is further provided with a waste trap 7 made of a U-piping 8 to store a fixed amount of waste developer in and a waste piping 9 connected to the exhaust trap 4 via waste trap 7. Such a development processor always stores a fixed amount of waste developer in the waste trap 7, and this waste shuts, of the development processing unit from the waste piping; therefore, the problems of effects on the exhaust amount of the development processing unit and the reflux of atmosphere from the waste piping can be eliminated.
申请公布号 JPS61160933(A) 申请公布日期 1986.07.21
申请号 JP19850001170 申请日期 1985.01.08
申请人 NEC CORP 发明人 AMAI HIDEMI
分类号 G03F7/30;H01L21/027;H01L21/30 主分类号 G03F7/30
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