| 摘要 |
PURPOSE:To obtain the integration of photo elements optically coupled enough and electrically insulated enough, by a method wherein the titled element is constructed so that a multilayer-structural semiconductor forms a mesa stripe including a stripe active region, and that semiconductor layers below the active region are exposed at the part other than the mesa stripe. CONSTITUTION:An N-type InP buffer layer 2, a non-doped InGaAsP active layer 3, a P-type InGaAsP photo guide layer 4, and a P-type InP clad layer 5 are successively laminated on an N-type InP substrate 1. Further, this element forms a multilayer structure consisting of a P-type InP block layer 6, an N-type InP block alyer 7, a P-type InP buried layer 8, and a P<+>-type InHaAsP contact layer 9 which are laminated by exclusing the upper part of a mesa stripe 11. The P<+>-type InGaAsP contact layer 9 is removed between two P-side electrodes 16, 17, and the layers from the non-doped InGaAsP active layer 3 to the P-type InP buried layer 8 are removed in the neighborhood of the stripe active layer 3', resulting in the formation of a mesa stripe 15 including the active layer 3'.
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