发明名称 METHOD AND APPARATUS FOR WIRE-BONDING OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve ball formability and bonding properties by heating a wire in a reducing gas atmosphere between a section to a capillary from a wire delivery section and reducing and treating the wire. CONSTITUTION:A copper wire 2 is delivered from a spool 1a, passed through a duct proper 22 in a duct 21 for reduction, and passed through a shielding duct 13, a clamper 4, a shielding duct 14, a clamper 5, a shielding duct 15 and a capillary 6, the copper wire 2 is projected, and operation is started. Consequently, a ball 8 is formed at the tip of the copper wire 2 by an electric torch rod 7 in an inert gas flowing out of a nozzle 7a, and bonding work is continued. When the copper wire 2 is introduced to the duct proper 22 during said operation, the wire is heated at a high temperature, activated by a reducing gas flowing in from an inflow port 24, cooled by an inert gas from an inflow port 25, discharged from the duct 21 for reduction and admitted to the shielding duct 13. When the wire reaches the capillary 6, the ball 8 is shaped, and the wire is bonded. Accordingly, the copper wire is reduced sufficiently even when using a base metal wire, bonding properties are improved, and bonding having stable high quantity can be conducted.
申请公布号 JPS61159743(A) 申请公布日期 1986.07.19
申请号 JP19850000187 申请日期 1985.01.07
申请人 TOSHIBA CORP 发明人 ATSUMI KOICHIRO;ANDO TETSUO;KOBAYASHI MITSUO;USUDA OSAMU
分类号 H01L21/603;H01L21/60 主分类号 H01L21/603
代理机构 代理人
主权项
地址