| 摘要 |
PURPOSE:To form nitride films in sufficient film thickness without damaging a junction, etc. in a semiconductor by plasma by shaping the first nitride thin- film onto a surface to be formed on a semiconductor substrate with a photochemical reaction and forming the second thin-film consisting of the same reaction product onto the first thin-film by a plasma vapor phase reaction. CONSTITUTION:A P-type semiconductor is grown on a P<+> type GaAs substrate in an epitaxial manner, and an N<+> layer is grown in the epitaxial manner. A P<+> layer is diffused and shaped onto the back of the P-type substrate in an silicon semiconductor. The surface is coated with phosphorus glass, and phosphorus is diffused to form an N<+> layer. The substrate is effective as a photoelectric conversion device, and gold (for GaAs) or nickel (for Si) is shaped onto the photoelectric conversion device in thickness of 3,000rho through a vacuum deposition method to form electrodes 2. A nitride thin-film 3 is shaped through an optical CVD method, and an silicon nitride film is formed through a method in which another nitride thin-film is shaped continuously without being exposed to atmospheric air through a plasma CVD method. |
