THERMAL HEAD AND MANUFACTURE THEREOF

摘要

This invention discloses a thermal head having a resistive layer of a thin Ta-Si-O film containing more than 45 mol % and at most 75 mol % of a silicon oxide in terms of SiO2, and a method of manufacturing a thermal head by sputtering a sintered target in vacuum atmosphere at an argon gas partial pressure of 10x10-3 Torr to 80x10-3 Torr so as to obtain the resistive layer.