| 摘要 |
PURPOSE:To simplify the manufacturing process of a semiconductor device by simultaneously executing a process, in which ions are implanted to an inter- element isolation region in a semiconductor device, and a process in which ions are implanted to an element forming region and a short-channel effect is prevented. CONSTITUTION:When the conditions of ion implantation are determined, energy, a dosage and the range of implantation depth are decided so as to form an impurity profile in a region in which a short channel effect is inhibited sufficiently in an element forming region. Energy, a dosage and the thickness of a LOCOS film are determined so as to simultaneously shape a sufficient impurity profile under a LOCOS8 in a field region. Consequently, even an effect increasing the concentration of a field substrate is displayed in the ion implantation. As a result, the energy of ions, the dosage, the pressure of a field film, implantation depth, etc. are optimized and the method is executed so that an impurity is introduced to the region sufficiently inhibiting the short-channel effect in the element forming region and under the LOCOS8 in the field region. Accordingly, ion implantation has been divided into independent two processes, but the impurity may be treated through one-time ion implantation, thus simplify processes. |
