MANUFACTURE OF PLASMA CVD FILM

摘要

PURPOSE:To make it feasible to arbitrarily control the distribution of film thickness and film quantity of plasma CVD film by a method wherein gas is fed under control from gas nozzles to control the material gas flow of plasma CVD film within the space including basic material. CONSTITUTION:After vacuumizing a vacuum vessel 101 utilizing a vacuumm pump 105, the mixed gas comprising compound gas containing the component element of thin film to be formed on the surface of base material 102 and nitrogen is fed to the vacuum vessel 101 through a gas feeding nozzle 104 while the pressure in the vacuum vessel 101 is maintained at the specific reduced level by means of manipulating a butterfly valve 107 and feeding nitrogen gas under control through gas nozzles 112. Besides the basic material 102 is heated under control by a sample table 103. Next low temperature plasma is produced in the space including the basic material 102 by an electrode 108. Finally each nozzle 112 may be arranged to control the nitrogen gas to be fed so that the gas jetted from gas nozzle 104 may not be mixed with the low temperature plasma of material gas.