| 摘要 |
PURPOSE:To selectively deposit a high density thin film by making a boundary clear by a method wherein an energy beam, which is absorbed by the molecular layer of the reaction gas absorbed into a substrate or on the substrate but not absorbed by reaction gas, is made to irradiate on the prescribed region of the substrate. CONSTITUTION:Reaction gas G such as silane, for example, flows in from the injection hole 2 located on the upstream side of a reaction cylinder 1, and the gas (g) such as hydrogen, for example, generated by decomposition is exhausted from an exhaust hole 3. A laser light L is a selectively made to irradiate through an aperture 6a on the surface 19a of the substrate 10, having ultraviolet ray absorbing property such as silicon, for example, provided in a reaction cylinder 1. Reaction gas G is not photo-decompounded by the wavelength of the laser light L, and the laser light L is selected in the range wherein said beam is fully absorbed into a substrate 10. The laser light L is made to irradiate intermittently for a short period only, and after the lapse of a long quiescent time, the laser light L is made to irradiate again, and the above-mentioned procedure is repeatedly performed subsequenly. As a result, a highly densed thin film can be selectively deposited with a clear foundary. |
