| 摘要 |
<p>A high-precision alignment method, e.g. for fine-line device fabrication uses pairs of alignment marks. One mark of each pair comprises two spaced-apart parallel lines (32, 34; 36, 38). The other mark (22; 24) comprises a notch or arrow-head including an apex portion. In practice, the orientation between the apex portion and the associated parallel lines of the pattern can be read relatively easily with high accuracy. The method can be used to align a mask or reticle with respect to a wafer and/or to evaluate actual level-to-level registration achieved between a set of masks or reticles and a wafer.</p> |
