| 摘要 |
PURPOSE:To easily perform a heat equalizing adjustment as well as to enable to conduct a high quality treatment by a method wherein the material to be treated is supported by the outer and the inner circumferential surfaces of the cylider-shaped surrounding wall of a susceptor assembled body, an introducing hole from which reaction gas is introduced is provided on the top plate, and an exhaust hole from which reaction gas is exhausted is provided on the bottom plate. CONSTITUTION:Reaction gas flows from upside to downside passing through the annular circulating path 27 lcoated btween the outer circumferential surface of a susceptor assembled body 11 and a reaction pipe 10, and at the same time, the gas is brought into an introducing hole 25, passes through the circulating path 28 located inside the susceptor assembled body 11, and runs downward from an exhaust hole 26. A partition member 30 is positioned in such a manner that the cross-sectional area of the outer gas circulating path 27 and the inner gas circulating path 28 are made almost equal. As a result, the velocity of flow of the reactions gas is made equal at the inner and the outer circulating paths, and the effect of the velocity of flow of gas inflicted on a wafer 20 on the inner and the outer circumferential surfaces 21a and 21b located inside and outside of a surrounding wall 21 are brought to equal condition. The surrounding wall 21 of the susceptor assembled body 11, a top plate 23 and a bottom plate 24 are manufacturd by sic-coated black lead. |
