| 摘要 |
PURPOSE:To remove leak current, and effectively increase and decrease the width of a depletion layer at the channel part, and to enable the control of superconductive current, by a method wherein the depth (the width of a semiconductor layer for channel) of the P-N connection at the superconductive electrode part for source and drain is made larger than that of the channel part. CONSTITUTION:A semiconductor layer 5 having reverse conductive type to a substrate which is composed of epitaxial layer or ion implanted layer, is composed on a semiconductor substrate 4, and furthermore a source layer 1 and a drain layer 2 are formed on it. By this, the space (l) of the source layer 1 and the drain layer 2 becomes the channel part (channel layer 3) in which superconductive current flows in the semiconductor. Next, the width of the channel part 3 is made thin as far as (d) by etching the semiconductor layer 5 using the source electrode 1 and the drain electrode 2 as mask as these are. By this, it is possible to control the width of the channel at the channel part, and to control the superconductive current with increasing the leak current at the source part and drain part against to the expansion and contraction of the width of a depletion layer from underside. |
