| 摘要 |
PURPOSE:To enable to uphold the durability of the insulating mask of the sub strate for bump electrode formation as well as to reduce the generation of pinhole by a method wherein holes are opened in order on the insulative film and the second conductive film and after an annealing is performed, bump metals are formed on the exposed parts of the first conductive film by performing an electroplating. CONSTITUTION:A conductive film 10 consisting of a single layer or plural layers is formed on one main surface of such an insulating substrate 9 as glass by an evaporation method and so forth. Then, an aluminum film 11 is laminated on the conductive film 10. Then, an insulative film 12 is laminated on the aluminum film 11. After that, holes are opened in order on the insulative film 12 and the aluminum film 11 using a resist pattern as a mask by a photo etching method and windows 13 are opened. Then, after the resist is removed, an annealing is performed in an atmosphere of oxygen or in the air and the exposed parts of the aluminum film 11 are oxidized. Then, bump metals 14 are formed on the windows 13 by performing an electroplating using the residual parts of the insulative film 12 and the aluminum film 11 as masks. |
