| 摘要 |
PURPOSE:To enable to easily flatten the burried part of the recessed part formed in the surface of the substrate without using a special upper layer, a mask and so forth by a method wherein the recessed part is roughly buried with a semiconductor substance and after an oxidation is performed on the surface of the recessed part, an oxide film on the surface thereof is removed. CONSTITUTION:When a semiconductor substance (polycrystalline silicon) 3 is filled in a recessed part 2 formed in the surface of a substrate 1, a V-shaped groove 4 is formed. After that, when the oxidation is performed on the semiconductor substance 3, the narrowed point part 41of the V-shaped configuration of the groove 4 is not oxidized sodeep compared with the other flat parts 42 though the point part 41 and the other flat parts 42 differ from each other in a degree of the oxidation. Accordingly, it follows that the depth of the V-shaped groove 4 is relaxed judging from the lower surface of an oxide film 5. After this, when the oxide film 5 is removed, a flat buried structure with the reduced depth of the V-shaped groove 4 is obtainable. |
