| 摘要 |
PURPOSE:To enable high speed operation as well as to realize elements of high pressure resistance and high output, by a method wherein many carriers are injected in hot condition in the longitudinal direction, and the space electric charge barrier formed by it is modulated by injecting a few carriers and the transistor operation is made to perform. CONSTITUTION:An n<+>-GaAs contact layer 13, an n-AlxGa1-xAs wide cape emitter 15, an i (or n<->)GaAs dynamic layer 14 and an n<+>-GaAs contact layer 17 are formed between a cathode electrode 11 and an anode electrode 12, and furthermore a p-GaAs layer 16 of a control electrode to which a few carriers are injected to cancell the space electric charge barrier which is formed on the dynamic layer 14 is provided. In this element the running time of electron becomes short when i (or n<->)GaAs layer 14 is made under about 1mum and high speed operation can be expected. Since the dynamic layer 14 is i or n<-> layer of which doping density is sufficiently low, the pressure resistance of the element becomes large, and the application for high output element becomes possible. |
