| 发明名称 |
Electrical circuit including an insulated-gate field effect transistor having an epitaxial layer of relatively lightly doped semiconductor material on a base layer of more highly doped semiconductor material for improved operation at ultra-high frequencies |
| 摘要 |
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| 申请公布号 |
US3315096(A) |
申请公布日期 |
1967.04.18 |
| 申请号 |
US19640345365 |
申请日期 |
1964.02.17 |
| 申请人 |
RADIO CORPORATION OF AMERICA |
发明人 |
CARLSON DAVID JOHN;RAUSCHER DANIEL H. |
| 分类号 |
H03B5/24;H03B19/03;H03F3/193;H03K3/47 |
主分类号 |
H03B5/24 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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