| 摘要 |
PURPOSE:To allow the gettering of damaging impurities and lattice distortions in the epitaxial growth process by implanting selectively ionized Si atoms onto the surface of a semiconductor substrate to form dislocation regions on the substrate surface and applying heat-treatment prior to the process. CONSTITUTION:By depositing a BSG film 7 on the surface of a wafer 1 which has been partially implanted with ionized Si atoms through a diffusion window 4, and applying heat-treatment to the wafer 1, a P<+> type diffusion region 8 is formed due to boron diffusion from the film 7 and, at the same time, a disloca tion region 6' is formed in the portion where Si ions have been implanted. The dislocation region 6' absorbs damaging impurities 5 remaining in the wafer 1 by virtue of gettering effect of the region 6' so that a wafer free from defects in its crystalline structure is produced. Accordingly heat-treatment at about 1,000 deg.C, which has been separately applied as adopted in the conventional method that uses a PSG film, is omitted to facilitate the manufacture of semicon ductor devices having shallow junctions such as high speed and high frequency transistors. |
