| 摘要 |
<p>There is disclosed a semiconductor device provided with a metal layer (1, 2) which presents a structured surface in the areas subjected to thermal shock loads. To this effect, there is provided under the metal layer (1) at the top surface of the semiconductor, projecting oxide portions (16) which form in the metal coating layer a predetermined structure. Thus, when because of thermal shock loads, different elongation of the semiconductor material and the metal layer (1) and shearing stresses occur, the top surface opposes any tearing or slitting.</p> |
