| 摘要 |
PURPOSE:To assist reflection from a back electrode of long-wave length beams in a photoelectric conversion device, and to improve conversion efficiency as the photoelectric conversion device by using a chromium alloy, to which copper or silver is added, a Cu-Cr alloy or an AG-Cr alloy, as a material. CONSTITUTION:A light-transmitting conductive film, an upper surface thereof has tin oxide to which fluorine is added, is formed onto a substrate 1 consisting of glass, an organic film or the like having light-transmitting properties and an insulating surface through an electron beam evaporation method, etc. Laser beams are projected, a first opened groove 13 is shaped, and first electrodes 37 are prepared in each inter-element region 31, 11. A nonsingle crystal semiconductor layer 3, which has a P-N or P-I-N junction and to which hydrogen or a halogen element is added, is formed onto the upper surfaces of the first electrodes 37 through a plasma CVD method, etc. A second opened groove 14 is shaped on the first element side of the opened groove 13. Accordingly, ITO15 is formed onto a side surface 8 through the electron beam evaporation method as a light-transmitting conductive film CTF. A second conductive film 25 is shaped onto the surface of the CTF through a magnetron sputtering method by a chromium alloy mainly comprising chromium to which 2.5wt% copper is added. Second electrodes 39, 38 are shaped, and a third opened groove 20 is obtained. A photoelectric conversion device in which the elements 31, 11 are connected in series by a connecting section 4 is obtained. |
