发明名称 VERTICAL THERMAL TREATMENT APPARATUS FOR SEMICONDUCTOR ARTICLE
摘要 PURPOSE:To avoid partial corrosion by providing a gas chamber above a treating pipe, disposing gas nozzles around a rotating shaft in the wall of the gas chamber, and providing sealing between the two by using a gas, thereby improving recovery of the treating gas and reducing the portion which is exposed to the treating gas. CONSTITUTION:A wafer boat is suspended by a drive shaft 11 through a rotating shaft 42 of quarts glass. A gas for treating a semiconductor is introduced from the bottom of a treating pipe 1, moves upward, and is introduced through the space between a cover 20 and the shaft 42 into a chamber 52 constructed by a tublar body 31 and the upper wall 40. Gas nozzles are provided around the entire periphery of the shaft hole in the lower surface of the wall 40, and an inert gas is jetted out through a passage 41 and a pipe 45 in an annular portion 39. The axes of the gas nozzles are disposed so that they are downwardly slanted, thereby preventing the treating gas from leaking through the space between the shaft 42. Taper of the shaft 42 is for automatic centering. With this structure, recovery of the treating gas improves, and even if a corrosive treating gas is used, the portion to be exposed to the treating gas reduces. Further, since sealing between the chamber and the shaft is provided by a gas, drive torque is also small.
申请公布号 JPS61156730(A) 申请公布日期 1986.07.16
申请号 JP19840281628 申请日期 1984.12.27
申请人 DEISUKO SAIYAA JAPAN:KK 发明人 OTSUKI KENJI
分类号 H01L21/205;H01L21/22;H01L21/31 主分类号 H01L21/205
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