| 摘要 |
PURPOSE:To prevent transfer failure of a pattern by providing a trench between circuit areas, producing a film to be etched, applying a resist, closely contacting a mask, and performing an exposure phenomenon. CONSTITUTION:The main surface 1b of a GaAs substrate constituting a circuit forming area is divided by an etching trench 1a, and a positive resist 2 is rotationally applied. A mask 3 of a pattern 3a is closely contacted. A film 4 is a film to be etched such as SiO2, and is coated over the whole GaAs substrate before the trench 1a is performed. When the mask 3 is closely contacted with the positive resist 2, air between these escapes into the recess of th resist 2 on the trench 1a, so that transfer failure due to the residual air is dissolved. Further, the entire trench can be utilized as a scribe line, and breakage is reduced at the time of dividing. |
