| 摘要 |
PURPOSE:To obtain the titled device suitable to increase integration, by devising the method of reading signal charged from the charge accumulation part. CONSTITUTION:In the MOS type area sensor, address lines 5a, 5b are arranged on the boundary region (normally an element isolation region) 6a of picture elements adjacent in the vertical direction by superposition, and readout lines 4a, 4b are arranged on the boundary region 6b of picture elements adjacent in the horizontal direction. Such a construction determines horizontal and vertical pitches on the basis of the dimensions of charge accumulation parts 1a, 1b and the widths of element isolation regions 6a, 6b, respectively, and prevents the pitches from direct effects of the dimensions of readout gates 2a, 2b; readout drains 3a, 3b; the readout lines 4a, 4b; and the address lines 5a, 5b. Therefore, the increase in integration can be contrived. |
