| 摘要 |
PURPOSE:To contrive to improve the reliability of wiring by preventing the increase in contact resistance of the titled device, by a method wherein the insulation film in the periphery of a contact hole is fused into a taper by heating the substrate surface. CONSTITUTION:Gate electrodes 15a, 15b are formed on top of a P-type Si substrate 11. Next, N<+> source and drain regions 16, 17 as N-type diffused layers are formed; then, P<+> source and drain regions 18, 19 as P-type diffused layers are formed. Further, an SiO2 film 20 as the interlayer insulation film and a phosphorus-doped glass film 21 as the low-temperature fused insulation film are formed over the whole surface. Contact holes 22 are formed by selectively etching the portions of the insulation film each corresponding to the N- and P-type diffused layers. The whole substrate is coated with a Ti film 23, which is thereafter made to react with the Si in the substrate 11 by heating the substrate 11, resulting in the formation of a Ti silicide layer 24. Finally, the substrate surface is heated. This process makes the glass film 21 fused into a taper A at the contact hole part and other step parts, leading it to flattening. |
