| 摘要 |
PURPOSE:To facilitate flattening of interlayer insulating films in forming a multilayer wiring structure by reheating resist, which has been prepared for patterning a wiring layer forming the lower layer, after patterning to give gentle slants to the resist pattern and further also to the wiring layer using the resist pattern thus shaped as a mask. CONSTITUTION:A photoresist layer is formed on the whole surface of a layer 2 composing of metal such as aluminium deposited on the whole surface of an insulating film 1 and is patterned by exposure- and development processes to leave a resist pattern 3. As the resist pattern 3 has sharply slanting sides, the so-called 'post baking heating' at a high temperature at which resin material is softened - is conducted to moderate the slant. Due to a reflow phenomenon caused by baking, gentle slants are given to the side walls of the resist pattern 3', which is then used as a mask for etching and subsequently removed to obtain a patterned metal layer 2' having gently slanting sides. |
