| 摘要 |
PURPOSE:To prevent the disconnection, shift, and rise of Al wiring layers formed on a TiN film serving as the barrier layer of the titled device by reducing its stress by Ar<+> ion implantation to it. CONSTITUTION:A window is opened at the electrode-forming part of an insulation film 12 on a semiconductor substrate 11, and a silicide layer 13 is formed. Next, in order to increase the overage of the barrier layer, and Al thin layer 14 is formed, and then a TiN film 15 is formed under conditions for enhancing barrier properties. The stress of the TiN film 15 is reduced by Ar<+> ion implantation as shown by arrows. Finally, an Al wiring layer 16 is formed to a desired film thickness. This method prevents the disconnection, positional shift, etc. of Al wirings and improves the IC reliability. |
