| 摘要 |
PURPOSE:To reduce the area from which the same capacitance value is obtained, and to reduce leakage current, by a method wherein the tantalum compound TaxAlyOz made of tantalum, aluminum, and oxygen is used as a dielectric layer. CONSTITUTION:The capacitor is composed of a dielectric layer 17 and an im purity region 14 and an electrode 18 arranged above and below it. The tantalum- aluminum-oxygen compound TaxAlyOz is used as the dielectric layer 17 of this capacitor. Since the capacitor thus formed with a dielectric layer made of TaxAlyOz is several times larger than the normally used SiO2 in relative dielectric constant, the area from which the same capacitance value is obtained can be extremely reduced. Further, since the TaxAlyOz film has very small leakage current at 10<-12>A or less, it can exhibit a great effect as the dielectric film of the capacitor to increase the density of the titled device. |
