| 摘要 |
PURPOSE:To obtain the high-withstand-voltage high-speed diode of good share in reverse voltage during reverse recovery, by a method wherein the carrier lifetime is made shorter from the side of chip areas reduced by a common beveling to the side of enlarged areas. CONSTITUTION:Diode chips 1, 2 having P-N junctions 11, 12 are brazed with aluminum 3. The exposed side surfaces of the P-N junctions 11, 12 of both chips are beveled and increased in withstand voltage by forming an inclined surface 6. In the case of such a structure, when the carrier lifetimes of the two diode chips 1, 2 are the same, a difference generates between the reverse recovery waveform 31 of the smaller chip 1 and that 32 of the larger chip 2. Then, the carrier lifetime of the diode chip 2 is made shorter than that of the chip 1 by introducing lifetime killers, thus reducing the value of a reverse recovery time and the peak value of a reverse recovery current, so that both the diode chips 1, 2 share the reverse recovery voltage by contriving to make equal reverse recovery charge amounts 33. |
