| 摘要 |
PURPOSE:To enable to dispense with it for an H-containing substance layer to be installed on the front surface of a semiconductor radiation detector by a method wherein a high-concentration H-containing substance layer is directly provided in the surface of the semiconductor substrate. CONSTITUTION:A P-type Si substrate 1 is put in a vacuum vessel and a glow discharge is performed using doping gas obtainable by mixing phosphine into H under the prescribed conditions, whereby an N<+> type region (resistance region) 2 and an H-containing region 6 are formed in the surface of the substrate 1. The titled detector is constituted in such a way and protons 5 to generate when a neutron beam 4 passes through the region 6 are guided into the depletion layer to generate due to the P-N junction of the P-type Si substrate 1 and the N<+> type region 2 to make an electron-hole pair form and the neutron beam 4 is detected. According to this constitution, as there is no need to provide the H-containing substance layer on the front surface of the detector, the struc ture thereof is simplified. |
