| 摘要 |
PURPOSE:To omit a protecting layer, which is used for protection of the right side of a semiconductor, comprizing pitch, etc., that requires the labor for coating and removal every time the oxide film on the back of the semiconductor is removed, by coating the right side surface with a resist film and grinding the back with a parallel grinder. CONSTITUTION:The electrode pattern on the right surface of a semiconductor is coated with a resist film 8 for the purpose of protection in removing the oxide film 7. Subsequently the semiconductor plate is reversed to remove the oxide film by grinding down the back of the plate in the range of 1 - several ten mum, using a diamond wheel 9 of a rotary surface grinder. Finally the resist film 3 remaining on the right side is stripped and a metal layer is deposited on the back. Coating and stripping of the resist is performed with the application of the conventional technique and apparatus developed for ordinary photoetching and also can be automatized. |
