| 摘要 |
PURPOSE:To reduce a strain applied to a magnetic thin film by a method wherein an insulating film composed of the magnetic thin film and silicon dioxide is formed by a bias sputter method while a bias potential is varied arbitrarily. CONSTITUTION:While the warp of a substrate is zero when a potential difference is zero, a substrate of width 10mm is warped bout 1.0mum when the potential difference is 11.5V, and it is warped about 1.4mum when said difference is 35.0V. Therefore a stepped portion and other portions, for instance, need to be connected in a smooth curve and, in addition, the formation of a film having a relatively small film thickness and a fine construction is demanded. A first insulating film 5 and second insulating films 8a and 8b are formed in the condition in which a large bias potential is impressed thereon, and they do not need to be connected in a smooth curve. In addition, the film thickness thereof may be large relatively, and the fine construction is not demanded either. A third insulating film 10 is formed with the bias potential lowered. Thereby the warp of the substrate is lessened, and thus a strain applied to a magnetic thin film can be reduced.
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