发明名称 |
Semiconductor laser array device. |
摘要 |
<p>The semiconductor laser array device is made up of closely adjacent writing and reading semiconductor lasers driven independently and including respective stripe shaped active layers (2 and 3). Cleaved facets at the front and rear ends of each active layer (2, 3) confront the front and rear surfaces (4 and 5) respectively of the device. The device further comprises first transparent dielectric films (6 and 9) formed over the entire front and rear surfaces (4 and 5) of the device, a metal film (7) having a high reflectivity and formed on the rear dielectric film (6) to cover the cleaved facet of the active layer (2) on the rear surface of the writing laser, and a further transparent dielectric film (8) formed on the entire rear surface of the semiconductor laser array device to enclose the metal film (7).</p> |
申请公布号 |
EP0187716(A2) |
申请公布日期 |
1986.07.16 |
申请号 |
EP19860300098 |
申请日期 |
1986.01.08 |
申请人 |
NEC CORPORATION |
发明人 |
ENDO, KENJI C/O NEC CORPORATION |
分类号 |
H01S5/00;G11B7/125;H01S5/028;H01S5/227;H01S5/40;(IPC1-7):H01S3/23;H01S3/08 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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