| 摘要 |
PURPOSE:To realize the high integration memory by a method wherein the cell structure is made three-dimensional by forming a transfer transistor on the capacitor. CONSTITUTION:The memory cell of a dynamic RAM of 1 transistor-1 capacitor made of an aluminum electrode 415 as the bit line, a gate electrode as the gate (word line) of a transfer gate transistor, an Si substrate 401 as the capacitor, a gate oxide film 402, and a poly Si layer 404 is formed. Since the transfer transistor is thus formed on the capacitor, the occupation area becomes almost the same as the capacitor area, and refinement is realized. |
