| 摘要 |
PURPOSE:To obtain an inexpensive integrated circuit IC with no special process by forming an PNP transistor of a longitudinal structure which contains a p-type epitaxial layer formed on an n-type semiconductor substrate as a collector, an n-type area formed into said epitaxial layer as a base and a p-type area formed into the n-type area as an emitter respectively. CONSTITUTION:A wafer contains a p-type epitaxial layer 7 formed on an n-type silicon substrate 6. An NPN type transistor 27 serving as a main control transis tor of a series regulator contains a p-type layer 7 divided by an n-type separat ing area 8 as a collector, an n-type area 9 formed into the layer 7 as a base and a p<+> type area 10 formed within the area 9 as an emitter. Thus a longitudi nal transistor is obtained with no special process. The collector terminal of the transistor is connected to a p<+> type layer 71 formed to the layer 7. An NPN type transistor 28 formed within an error amplifier 16, for example, which is laminated into such a wafer has a lateral structure where the layer 7 is used as a base and two n-type areas 9 formed into the layer 7 as a collector and a base respectively.
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