发明名称 UN DISPOSITIVO FOTOVOLTAICO SEMICONDUCTOR AMORFO Y MEJORADO
摘要 An amorphous semiconductor photovoltaic device having improved long term efficiency stability. The improved stability is achieved by grading the band gap energy of a portion of the photo-responsive layer of the device. The widest band gap energy portion of the photo-responsive layer is disposed nearest the light-incident surface of the device. The band gap gradation may be smooth or stepped, and may be accomplished by varying the composition of the source materials during deposition of the photo-responsive layer.
申请公布号 ES544481(D0) 申请公布日期 1986.07.16
申请号 ES19810005444 申请日期 1985.06.24
申请人 ENERGY CONVERSION DEVICES,INC. 发明人
分类号 H01L31/04;H01L31/052;H01L31/065;(IPC1-7):H01L31/00 主分类号 H01L31/04
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