| 摘要 |
PURPOSE:To manufacture a planar type photosensor rapidly responding to beams by fewer number of processes by forming a collecting electrode and continuously shaping a semiconductor layer, a photoconductive layer and a semiconductor layer. CONSTITUTION:A collecting electrode 51' consisting of Al, NiCr, Cr, etc. is formed, and photoetched in predetermined size. A semiconductor layer 55, a photoconductive layer 52 and a semiconductor layer 54 are shaped continuously through a plasma CVD method. These layers are photoetched in prescribed size, and a collecting electrode 51 composed of Al, NiCr, Cr, etc. is formed through a vacuum deposition method or a sputtering method, and photoetched in the predetermined size. |
