| 摘要 |
PURPOSE:To improve the yield in production by inserting a deformation stopping layer inhibiting the deformation of a groove on liquid-phase crystal growth into a current stopping layer or to a boundary between the current stopping layer and a substrate and a position separate by 0.3-0.9mum from the main surface of the surface of the current stopping layer. CONSTITUTION:A deformation stopping layer 55 inhibiting the deformation of the shape of a groove 52 on liquid-phase crystal growth is formed into a current stopping layer 53 or on a boundary between a substrate 51 and the current stopping layer 53, and the position of the deformation stopping layer 55 is set within a range of 0.3-0.9mum from the surface of the current stopping layer 53. Accordingly, special high precision is not required in relation to the depth of etching, thus manufacturing the title element with high yield.
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