| 摘要 |
PURPOSE:To make it possible to integrate layer on one substrate, by the constitution, wherein a groove part is provided in the direction perpendicular to the stripe direction of double heterojunction layers, selectively etching the side surface of a buffer layer, cleaving the double heterojunction layers in the vicinity of the etched side wall of the buffer layer, and the cleft parts are obtained. CONSTITUTION:On a N-GaAs substrate 1, double heterojunction layers 3-6 including various stripe structures, which control the lateral mode in parallel with an N-Al0.6Ga0.4As buffer layer 2 and an active layer 4, are provided. Then, a groove formed at a right angle (<110>direction) with the stripe structures so as to reach at least the buffer layer 2. Thereafter, only the N-Al0.6Ga0.4As buffer layer 2 is etched by fluoric acid and the like, which etch only the layer having high Al mixed crystal ratio. A force is applied to vicinities 9 of undercut end parts 8 from the surface of the crystal. Then the layers on the buffer layer are readily cleft since they are thin. Thus the cleft surfaces 10, which are to become the reflecting surfaces of a laser diode, are formed.
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